CJD4410 |
Part Number | CJD4410 |
Manufacturer | JCET |
Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate MOSFETS CJD4410 N-Channel 30-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATIONS z Load Switch z Battery Switch ... |
Features |
VDS =30V, VGS =0V
Drain-source on-state resistance (note 3)
RDS(on)
VGS =10V, ID =10A VGS =4.5V, ID =5A
Forward transconductance (note 3)
gfs
VDS =15V, ID =5A
Body diode voltage (note 3)
VSD
IS=2.3A, VGS =0
Dynamic (note 4)
Turn-on delay time Rise time Turn-off delay time Fall time
td(on) tr
td(off) tf
VDD=25V, RL=25Ω, ID =1A, VGEN=10V,RG=6Ω
Gate Resistance
Rg
f =1MHz
Notes : 1. This test is performed with no heat sink at Ta=25℃. 2. This test is performed with inifite heat sink at Tc=25℃. 3. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%.
4. Guaranteed by design, not subje... |
Document |
CJD4410 Data Sheet
PDF 330.75KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | CJD4435 |
JCET |
P-Channel MOSFET | |
2 | CJD44H11 |
Central Semiconductor Corp |
COMPLEMENTARY SILICON | |
3 | CJD45H11 |
Central Semiconductor Corp |
COMPLEMENTARY SILICON | |
4 | CJD47 |
Central Semiconductor Corp |
NPN SILICON POWER TRANSISTOR | |
5 | CJD01N60 |
ZPSEMI |
N-Channel Power MOSFET |