CJD30N10 |
Part Number | CJD30N10 |
Manufacturer | JCET |
Description | This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. ... |
Features |
High density cell design for ultra low RDS(on) Special process technology for high ESD capability Fully characterized avalanche voltage and current Excellent package for good heat dissipation Good stability and uniformity with high EAS APPLICATIONS Hard switched and high frequency circuits Uninterruptible power supply Power switching application MARKING EQUIVALENT CIRCUIT CJD3... |
Document |
CJD30N10 Data Sheet
PDF 526.22KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | CJD3055 |
Central Semiconductor Corp |
COMPLEMENTARY SILICON POWER TRANSISTOR | |
2 | CJD31C |
Central Semiconductor |
NPN POWER TRANSISTORS | |
3 | CJD32C |
Central Semiconductor |
PNP POWER TRANSISTORS | |
4 | CJD340 |
Central Semiconductor Corp |
SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS | |
5 | CJD3439 |
CDIL |
NPN SILICON PLASTIC HIGH VOLTAGE POWER TRANSISTORS |