| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon Technologies |
Fast Switching EmCon Diode • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • Easy paralleling Product Summary VRRM IF VF T jmax P-TO220-3.SMD 1200 12 1.65 150 P-TO220-2-2. V A V °C Type IDP12E120 IDB12E120 Pack |
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Infineon Technologies |
Fast Switching EmCon Diode • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • 175°C operating temperature • Easy paralleling Product Summary VRRM IF VF T jmax P-TO220-3.SMD 600 23 1.5 175 P-TO220-2-2. V A V °C Typ |
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Infineon Technologies |
Fast Switching EmCon Diode • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • 175°C operating temperature • Easy paralleling Product Summary VRRM IF VF T jmax P-TO220-3.SMD 600 9 1.5 175 P-TO220-2-2. V A V °C Type |
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Infineon Technologies |
Fast Switching EmCon Diode • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage www.DataSheet4U.net Product Summary VRRM IF VF T jmax P-TO220-3.SMD 600 6 1.5 175 P-TO220-2-2. V A V °C • 175°C operating temperature • |
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Infineon Technologies |
2nd Generation thinQ SiC Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHs compl |
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Infineon Technologies |
Fast Switching Emitter Controlled Diode • 1200 V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • Easy paralleling * RoHS compliant IDB18E120 Product Summary VRRM 1200 IF VF Tjmax 18 1.65 150 V A V °C PG-TO263-3-2 |
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Infineon Technologies |
Fast Switching Emitter Controlled Diode • 1200 V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • Easy paralleling * RoHS compliant IDB30E120 Product Summary VRRM 1200 IF VF Tjmax 30 1.65 150 V A V °C PG-TO263-3-2 |
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Infineon Technologies |
Fast Switching EmCon Diode • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • 175°C operating temperature • Easy paralleling Product Summary VRRM IF VF T jmax P-TO220-3.SMD 600 15 1.5 175 P-TO220-2-2. V A V °C Typ |
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Infineon Technologies |
Fast Switching EmCon Diode • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage www.DataSheet4U.net Product Summary VRRM IF VF T jmax P-TO220-3.SMD 1200 4 1.65 150 P-TO220-2-2. V A V °C • Easy paralleling Type IDP0 |
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Infineon Technologies |
2nd Generation thinQ SiC Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compl |
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Infineon Technologies |
Fast Switching EmCon Diode • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage www.DataSheet4U.net Product Summary VRRM IF VF T jmax P-TO220-3.SMD 1200 9 1.65 150 P-TO220-2-2. V A V °C • Easy paralleling Type IDP0 |
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Infineon Technologies |
Fast Switching Emitter Controlled Diode • 600VVEEmmitCteornCteocnhtrnoollleodgytechnology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • 175°C operating temperature • Easy paralleling IDB30E60 Product Summary VRRM IF VF Tjmax 600 30 1.5 175 V A |
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Infineon Technologies |
Fast Switching EmCon Diode • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage www.DataSheet4U.net Product Summary VRRM IF VF T jmax P-TO220-3.SMD 600 45 1.5 175 P-TO220-2-2. V A V °C • 175°C operating temperature • |
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