IDB04E120 |
Part Number | IDB04E120 |
Manufacturer | Infineon (https://www.infineon.com/) Technologies |
Description | and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your neare... |
Features |
Page 1
2003-07-31
IDP04E120 IDB04E120
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area 1)
Symbol min. RthJC RthJA RthJA -
Values typ. 35 max. 2.9 62 62 -
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Reverse leakage current
V R=1200V, T j=25°C V R=1200V, T j=150°C
Symbol min. IR VF -
Values typ. max.
Unit
µA 1.65 1.7 100 350 V 2.15 -
Forward voltage drop
IF=4A, Tj=25°... |
Document |
IDB04E120 Data Sheet
PDF 218.01KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IDB06E60 |
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Fast Switching EmCon Diode | |
2 | IDB06S60C |
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2nd Generation thinQ SiC Schottky Diode | |
3 | IDB09E120 |
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4 | IDB09E60 |
Infineon Technologies |
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5 | IDB10S60C |
Infineon Technologies |
2nd Generation thinQ SiC Schottky Diode |