| No. | Partie # | Fabricant | Description | Fiche Technique |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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Inchange Semiconductor |
Silicon NPN Transistor urrent VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 10A; VCE= 2V fT Current-Gain—Bandwidth Product IC= 2A; VCE= 10V Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 10A , IB1= -IB2= 2A RL= 15Ω; VCC=150V,VBB2=4V 2SC3714 |
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Inchange Semiconductor |
Power Transistor down Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A hFE DC Current Gain IC= 4A; VCE= 5V ICBO Collector Cutoff Current VCB= 1000V; IE= 0 IEBO |
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Inchange Semiconductor |
Silicon NPN Transistor METER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= 10μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 20 |
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Inchange Semiconductor |
Power Transistor n Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A hFE DC Current Gain IC= 2A; VCE= 5V ICBO Collector Cutoff Current VCB= 1000V; IE= 0 IEBO Emi |
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Inchange Semiconductor |
Power Transistor ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A ICES Collector Cutoff Current VCE= 1500V; RBE= 0 hFE DC Current Gain IC= 1A; VCE= 5V 2SC3729 MIN TYP. MAX UN |
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Inchange Semiconductor |
Silicon NPN Power Transistor tage IC= 6A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 0.3A ICBO Collector Cutoff Current VCB= 60V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 1V hFE-2 DC Current Gain IC= 6A; |
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Inchange Semiconductor |
Silicon NPN Power Transistor TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 900 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.0 V VBE(sat) Base-Emitter Satu |
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Inchange Semiconductor |
Silicon NPN Power Transistor (BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 2mA; IC= 0 ICBO Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 1A ; VCE= 5V |
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Inchange Semiconductor |
Power Transistor V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A ICBO Collector Cutoff Current VCB= 1000V; IE= 0 IEBO Emitte |
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Inchange Semiconductor |
Silicon NPN Power Transistor turation Voltage IC= 6A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 0.3A ICBO Collector Cutoff Current VCB= 80V ; IE= 0 IEBO Emitter Cutoff Current VEB= 6V ; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 1V hFE-2 DC Curren |
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Inchange Semiconductor |
Silicon NPN Transistor ollector-Emitter Saturation Voltage IC= 20mA ; IB= 4mA 0.5 V ICBO Collector Cutoff Current VCB= 15V; IE= 0 1 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 1 μA hFE DC Current Gain IC= 5mA ; VCE= 10V 30 200 fT Current-Gain—Bandwidth |
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Inchange Semiconductor |
Silicon NPN Transistor -Emitter Breakdown Voltage IC= 1mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= 10μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA; IB= 2mA VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 20mA; IB |
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Inchange Semiconductor |
Silicon NPN Transistor lector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 1000V; IE= 0 IEBO Emitter Cutoff Cur |
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Inchange Semiconductor |
Power Transistor AMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 500 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.5 V |
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Inchange Semiconductor |
Power Transistor RAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA; IB=0 500 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V ICBO |
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Inchange Semiconductor |
Power Transistor ETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 500 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.5 V I |
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Inchange Semiconductor |
Power Transistor NDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO E |
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