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2SC3798 |
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| Part Number | 2SC3798 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min.) ·Low Collector Saturation Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation AP... |
| Features |
ETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
500
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
1.5
V
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
100 μA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
15
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
8
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V; f= 1MHz
8
MHz
Switching Times
ton
Turn-on Time
1.0 μs
ts
Storage Time
IC= 3A; IB1= ... |
| Document |
 2SC3798 Data Sheet
PDF 211.01KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3790 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SC3790 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC3790 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 4 | 2SC3792 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 5 | 2SC3793 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|