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2SC3783 |
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| Part Number | 2SC3783 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed and... |
| Features |
TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
800
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
900
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
1.5
V
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
1.0 mA
hFE-1
DC Current Gain
IC= 10mA; VCE= 5V
10
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
10
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
VCC≈ 400V, IB1= 0.3A; IB2= -0.8A ... |
| Document |
 2SC3783 Data Sheet
PDF 218.66KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3780 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SC3781 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 3 | 2SC3782 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SC3783 |
Toshiba Semiconductor |
NPN Transistor |
|
| 5 | 2SC3784 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|