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2SC3789 |
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| Part Number | 2SC3789 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Complement to Type 2SA1479 APPLICATIONS ·High-definition CRT display. ·Color TV chroma output, high breakdown voltage drivers. ABSOL... |
| Features |
-Emitter Breakdown Voltage IC= 1mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Vltage
IE= 10μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA; IB= 2mA
VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current
IC= 20mA; IB= 2mA VCB= 200V; IE= 0
IEBO Emitter Cutoff Current
VEB= 4V; IC= 0
hFE DC Current Gain
IC= 10mA; VCE= 10V
fT
Current-Gain—Bandwidth Product
IC= 10mA; VCE= 30V
COB Output Capacitance
IE= 0; VCB= 30V, ftest= 1MHz
MIN TYP. MAX UNIT 300 V 300 V
5V 0.6 V 1.0 V 0.1 μA 0.1 μA
40 320 70 MHz 2.6 pF
hFE Classifications CD E F 40-80 60-120 100-... |
| Document |
 2SC3789 Data Sheet
PDF 179.50KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3780 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SC3781 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 3 | 2SC3782 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SC3783 |
Toshiba Semiconductor |
NPN Transistor |
|
| 5 | 2SC3783 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|