| No. | Partie # | Fabricant | Description | Fiche Technique |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 360mΩ(Max) ·100% avalanche tested ·Low input capacitance and gate charge ·Minimum Lot-to-Lot variations for robust device performa |
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INCHANGE |
N-Channel MOSFET ·Drain Current ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 6.3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO |
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INCHANGE |
N-Channel MOSFET ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE |
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INCHANGE |
N-Channel MOSFET ·With TO-251(IPAK) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power sup |
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INCHANGE |
N-Channel MOSFET ·With TO-251(IPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE M |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 790mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS |
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INCHANGE |
N-Channel MOSFET ·With TO-251(IPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE M |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 60mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 900mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS |
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