STU7NM60N |
Part Number | STU7NM60N |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor STU7NM60N FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 900mΩ(Max) ·100% avalanche t... |
Features |
·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 900mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 5 A IDM Drain Current-Single Pluse 20 A PD Total Dissipation @TC=25℃ 45 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Te... |
Document |
STU7NM60N Data Sheet
PDF 284.04KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | STU7NM60N |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STU7N105K5 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STU7N60M2 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STU7N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STU7N80K5 |
STMicroelectronics |
N-channel Power MOSFET |