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STU12N65M5 |
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| Part Number | STU12N65M5 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus... |
| Features |
·Drain Current ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 8.5 A IDM Pulse Drain Current 34 A Ptot Total Dissipation@TC=25℃ 70 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHA... |
| Document |
 STU12N65M5 Data Sheet
PDF 267.47KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STU12N65M5 |
ST Microelectronics |
N-Channel Power MOSFET |
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| 2 | STU12N60M2 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 3 | STU1224N |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 4 | STU1225PL |
SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor |
|
| 5 | STU12L01 |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|