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Inchange Semiconductor |
Silicon NPN Power Transistor ONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 1mA ICBO Collector Cutoff Current VCB= 60V; IE= 0 ICER Collector Cutoff Current VCE=60V;RBE=51Ω;TC= |
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Inchange Semiconductor |
Silicon NPN Power Transistor Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 hFE DC Current Gain IC= 0.5A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V tf Fall Time IC= 3A , IB1= 0.8A ; IB2= -1.6A RL= 66.7Ω; VCC= 200V MIN TYP. MA |
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INCHANGE |
NPN Transistor Sustaining Voltage IC= 30mA; IB= 3mA, L= 1.0mH MIN TY P. MAX UNIT 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 1.5mA 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 1.5mA 2.0 V ICBO Collector Cutoff Cu |
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Inchange Semiconductor |
Silicon NPN Power Transistor PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 2A; IB= 0.2A VCB= 50V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC |
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INCHANGE |
NPN Transistor METER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(On) Base-Emitter On Voltage IC= 0.5A; VCE= 5V ICBO Collector Cutoff Current At rated Voltage I |
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Inchange Semiconductor |
Silicon NPN Power Transistor licon NPN Darlington Power Transistor KSD986 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1mA VBE(sat) Base-Emitter Satura |
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Inchange Semiconductor |
Silicon NPN Power Transistor CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 5V ICBO Collector Cutoff |
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Inchange Semiconductor |
Silicon NPN Power Transistor nt VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 hFE DC Current Gain IC= 1A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V tf Fall Time IC= 4A , IB1= 0.8A ; IB2= -1.6A RL= 50Ω; VCC= 200V MIN TYP. MAX UNIT 5.0 |
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Inchange Semiconductor |
Silicon NPN Power Transistor Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 hFE DC Current Gain IC= 0.5A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V tf Fall Time IC= 3A , IB1= 0.8A ; IB2= -1.6A RL= 66.7Ω; VCC= 200V MIN TYP. MA |
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Inchange Semiconductor |
Silicon NPN Power Transistor lector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE DC Current Gain IC= 1A ; VCE= 5V fT Current-Gain—Bandwidth Product VECF C-E Diode Forward Voltage tf Fall Time IC= 1A; VCE= 10V IF= 6A IC= 5A , IB1= 1A |
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Inchange Semiconductor |
Silicon NPN Power Transistor Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE DC Current Gain IC= 1A ; VCE= 5V fT Current-Gain—Bandwidth Product VECF C-E Diode Forward Voltage tf Fall Time IC= 1A; VCE= 10V IF= 5A IC= 4A , IB1= |
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Inchange Semiconductor |
Silicon NPN Power Transistor urrent VCE= 1400V; VBE= 0 ICBO Collector Cutoff Current VCB= 800V; IE= 0 ICBO Collector Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain tf Fall Time IC= 1A; VCE= 5V IC= 8A; VCE= 5V IC= 6A, IB1= 1.2A; IB2= -2.4A; V |
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Inchange Semiconductor Company |
Silicon NPN Power Transistor Breakdown Voltage IC= 1mA ; IE= 0 150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 8 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 |
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INCHANGE |
NPN Transistor NDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A ; VCE= 5V ICBO Collector Cutoff Current VCB= 60V ; IE=0 IEBO Emitt |
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Inchange Semiconductor |
Silicon NPN Power Transistor own Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current hFE-1 DC Current Ga |
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Inchange Semiconductor |
Silicon NPN Power Transistor O Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE DC Current Gain IC= 0.5A ; VCE= 5V fT Current-Gain—Bandwidth Product VECF C-E Diode Forward Voltage tf Fall Time IC= 0.5A; VCE= 10V IF= 2.5A IC= 2A |
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Inchange Semiconductor |
Silicon NPN Power Transistor VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 hFE DC Current Gain IC= 1A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V tf Fall Time IC= 5A , IB1= 1A ; IB2= -2A RL= 40Ω; VCC= 200V MIN TYP. MAX UNIT 5.0 V 1.5 V |
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Inchange Semiconductor |
Silicon NPN Power Transistor ent VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 hFE DC Current Gain IC= 0.5A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V tf Fall Time IC= 2A , IB1= 0.6A ; IB2= -1.2A RL= 100Ω; VCC= 200V MIN TYP. MAX UNI |
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Inchange Semiconductor |
Silicon NPN Power Transistor ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 0.5A ; VCE= 5V fT Current-Gain—Bandwidth Product VECF C-E Diode Forward Voltage tf Fall Time IC= 0.5A; VCE= 10V IF= 3.5A IC= |
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Inchange Semiconductor |
Silicon NPN Power Transistor O Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE DC Current Gain IC= 0.5A ; VCE= 5V fT Current-Gain—Bandwidth Product VECF C-E Diode Forward Voltage tf Fall Time IC= 0.5A; VCE= 10V IF= 2.5A IC= 2A |
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