KSD2012 INCHANGE NPN Transistor Datasheet, en stock, prix

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KSD2012

INCHANGE
KSD2012
KSD2012 KSD2012
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Part Number KSD2012
Manufacturer INCHANGE
Description ·High DC Current Gain- : hFE= 100 (Min)@ IC= 0.5A ·Low Saturation Voltage- : VCE(sat)= 1.0V (Max) ·High Power Dissipation : PC= 25 W(Max)@ TC= 25℃ ·100% avalanche tested ·Minimum Lot-to-Lot variations...
Features NDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A ; VCE= 5V ICBO Collector Cutoff Current VCB= 60V ; IE=0 IEBO Emitter Cutoff Current VEB= 7V ; IC=0 hFE-1 DC Current Gain IC= 0.5A ; VCE= 5V hFE-2 DC Current Gain IC= 3A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 5V MIN TYP. MAX UNIT 60 V 1.0 V 1.0 V 0.1 mA 10 uA 100 320 20 3 MHz
 hFE-1 Classifications Y G 100-200 150-320 Notice: ISC reserves the rights to make chang...

Document Datasheet KSD2012 Data Sheet
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