KSD2012 |
Part Number | KSD2012 |
Manufacturer | INCHANGE |
Description | ·High DC Current Gain- : hFE= 100 (Min)@ IC= 0.5A ·Low Saturation Voltage- : VCE(sat)= 1.0V (Max) ·High Power Dissipation : PC= 25 W(Max)@ TC= 25℃ ·100% avalanche tested ·Minimum Lot-to-Lot variations... |
Features |
NDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(on) Base-Emitter On Voltage
IC= 0.5A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 60V ; IE=0
IEBO
Emitter Cutoff Current
VEB= 7V ; IC=0
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 5V
hFE-2
DC Current Gain
IC= 3A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 5V
MIN TYP. MAX UNIT
60
V
1.0
V
1.0
V
0.1 mA
10
uA
100
320
20
3
MHz
hFE-1 Classifications Y G 100-200 150-320 Notice: ISC reserves the rights to make chang... |
Document |
KSD2012 Data Sheet
PDF 192.72KB |
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