KSD5000 |
Part Number | KSD5000 |
Manufacturer | Inchange Semiconductor |
Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATIN... |
Features |
O Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO Emitter Cutoff Current
VEB= 4V ; IC= 0
hFE DC Current Gain
IC= 0.5A ; VCE= 5V
fT Current-Gain—Bandwidth Product
VECF
C-E Diode Forward Voltage
tf Fall Time
IC= 0.5A; VCE= 10V
IF= 2.5A
IC= 2A , IB1= 0.6A ; IB2= -1.2A RL= 100Ω; VCC= 200V
MIN TYP. MAX UNIT 8.0 V 1.5 V 10 μA
40 130 mA 8
3 MHz 2.0 V 0.4 μs
isc website:www.iscsemi.cn
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Document |
KSD5000 Data Sheet
PDF 122.22KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KSD5001 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | KSD5001 |
Samsung semiconductor |
NPN Triple Diffused Planar Silicon Transistor | |
3 | KSD5002 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
4 | KSD5003 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
5 | KSD5003 |
Samsung semiconductor |
NPN Triple Diffused Planar Silicon Transistor |