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KSD5006 |
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| Part Number | KSD5006 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR... |
| Features |
nt
VCB= 800V ; IE= 0
IEBO Emitter Cutoff Current
VEB= 5V ; IC= 0
hFE DC Current Gain
IC= 1A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 10V
tf Fall Time
IC= 4A , IB1= 0.8A ; IB2= -1.6A RL= 50Ω; VCC= 200V
MIN TYP. MAX UNIT 5.0 V 1.5 V 10 μA 1 mA
8 3 MHz 0.4 μs
isc website：www.iscsemi.cn
2
... |
| Document |
 KSD5006 Data Sheet
PDF 122.86KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KSD5000 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | KSD5001 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 3 | KSD5001 |
Samsung semiconductor |
NPN Triple Diffused Planar Silicon Transistor |
|
| 4 | KSD5002 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 5 | KSD5003 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|