| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
INCHANGE |
N-Channel MOSFET ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·With TO-247 packaging ·With low gate drive requirements ·Low switching loss ·Low on-state resistance ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.6mΩ(Max)@VGS=10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Swit |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply · |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply · |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·S |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25 |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤ 15 5mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode po |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤ 100mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Easy to |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤ 52mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Easy to M |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤ 9.0mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode pow |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS ≥850V ·Static Drain-Source On-Resistance : RDS(on) ≤ 550mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·DC-DC Convert |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode an |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9.6mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤ 9.0mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode pow |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤ 4.2mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤175mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Easy to M |
|