IXFQ24N60X |
Part Number | IXFQ24N60X |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤175mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-... |
Features |
·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤175mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Easy to Mount ·Space Savings ·High Power Density ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 24 A IDM Drain Current-Single Plused 48 A PD Total Dissipation @TC=25℃ 400 W Tj Max. Operating Junction Temperature -55~... |
Document |
IXFQ24N60X Data Sheet
PDF 253.27KB |
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