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IXFP12N65X2M |
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| Part Number | IXFP12N65X2M |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFP12N65X2M ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device... |
| Features |
·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 24 PD Total Dissipation 40 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal... |
| Document |
 IXFP12N65X2M Data Sheet
PDF 195.94KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXFP12N65X2 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IXFP12N65X2 |
IXYS |
Power MOSFET |
|
| 3 | IXFP12N65X2M |
IXYS |
Power MOSFET |
|
| 4 | IXFP12N50P |
IXYS Corporation |
Polar MOSFETs |
|
| 5 | IXFP12N50PM |
IXYS Corporation |
Power MOSFET |
|