IXFH56N30X3 |
Part Number | IXFH56N30X3 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance an... |
Features |
·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 300 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 56 IDM Drain Current-Single Pulsed 112 PD Total Dissipation 320 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c... |
Document |
IXFH56N30X3 Data Sheet
PDF 217.78KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IXFH56N30X3 |
IXYS |
Power MOSFET | |
2 | IXFH50N20 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
3 | IXFH50N30Q3 |
IXYS |
Power MOSFET | |
4 | IXFH50N60P3 |
IXYS Corporation |
Polar3 HiperFET Power MOSFET | |
5 | IXFH50N60X |
IXYS |
Power MOSFET |