| No. | Partie # | Fabricant | Description | Fiche Technique |
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Hitachi Semiconductor |
2SK2225 • High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter Outline TO-3PFM ADE-208-140 1st. Edition D G 1 2 3 1. Gate 2. Drain 3. Source S |
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Hitachi Semiconductor |
2SK2938 • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline ADE-208-561B (Z) 3rd. Edition Jun 1998 LDPAK D 44 G S 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2938(L),2SK2938(S |
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Hitachi Semiconductor |
2SK1808 • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 2SK1808 Absolute Maximum Ratings (Ta = 25°C) Item Dra |
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Hitachi Semiconductor |
2SK1341 • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline TO-3P D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1341 Absolute Maximum Ratings (Ta = 25°C) |
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Hitachi Semiconductor |
2SK2796 • Low on-resistance RDS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK |1 D G S ADE-208-534C (Z) 4th. Edition Jun 1998 44 12 3 12 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratin |
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Hitachi Semiconductor |
2SK1342 • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1342 Absolute Maximum Ratings (Ta = 2 |
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Hitachi Semiconductor |
N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1761 Absolute Maximum Ratings (Ta = |
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Hitachi Semiconductor |
2SK2586 • Low on-resistance • RDS(on) = 7 m typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO-3P ADE-208-358 C 4th. Edition D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK2586 Absolute Maximum Ratings (Ta = 2 |
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Hitachi |
2SK1305 • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S |
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Hitachi Semiconductor |
2SK1317 • • • • • High breakdown voltage V DSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1 |
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Hitachi Semiconductor |
2SK1518 • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1517 |
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Hitachi Semiconductor |
2SK2221 • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Outline TO-3P D G1 2 3 1. Gate 2. Source (Flange) S 3 |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • • High breakdown voltage V DSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1 |
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Hitachi Semiconductor |
N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1809 Absolute Maximum Ratings (Ta = |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SK2931 Absolute Maximum Ratings (Ta = 25°C) Item Drain to sourc |
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Hitachi Semiconductor |
N-Channel MOSFET • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO –3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK3163 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source |
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Hitachi Semiconductor |
2SK135 |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 |
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Hitachi Semiconductor |
N-Channel MOSFET • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO –220AB D G 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source 2SK3069 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source |
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Hitachi Semiconductor |
N-Channel MOSFET |
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