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2SK3163 |
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| Part Number | 2SK3163 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK3163 Silicon N Channel MOS FET High Speed Power Switching ADE-208-736A (Z) 2nd Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device c... |
| Features |
• Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO –3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK3163 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note 3 Note 3 Note 2 Note 1 Ratings 60 ±20 75 300 75 50 214 110 150 –55 to +150 Unit V V A A A A mJ W ... |
| Document |
 2SK3163 Data Sheet
PDF 48.57KB |
| Distributor | Stock | Price | Buy |
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