2SK1317 |
Part Number | 2SK1317 |
Manufacturer | Hitachi Semiconductor |
Description | 2SK1317 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • High breakdown voltage V DSS = 1500 V High speed switching Low drive current No secondary breakdown Suitab... |
Features |
• • • • • High breakdown voltage V DSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1317 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Rating... |
Document |
2SK1317 Data Sheet
PDF 48.90KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SK1310 |
Toshiba Semiconductor |
N-Channel MOSFET | |
2 | 2SK1310A |
Toshiba Semiconductor |
N-Channel MOSFET | |
3 | 2SK1313 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK1313L |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK1313S |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |