GME 2SD fiche technique

No.	Partie #	Fabricant	Description
1	2SD880	GME	NPN Epitaxial Silicon Transistor  Low frequency power amplifier.  Complememt to 2SB834. Pb Lead-free Production specification 2SD880 TO-220AB TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector
2	2SD1005	GME	NPN SILICON EPITAXIAL TRANSISTOR  High Collector to Base Voltage.  Excellent DC Current Gain Linearity.  Complements to PNP type 2SB804. Pb Lead-free Production specification 2SD1005 ORDERING INFORMATION Type No. Marking 2SD1005 BW/BV/BU SOT-89 Package Code SOT-89 MAXIMU
3	2SD1913	GME	Power Transistor z Wide ASO (Adoption of MBIT process). z Low saturation voltage. z High reliability. z High breakdown voltage. z Micaless package facilitating mounting Pb Lead-free Production specification 2SD1913 TO-220AB MAXIMUM RATING operating temperature ra
4	2SD2061	GME	Power Transistor z Low saturation voltage, typically VCE(sat)=0.3V at IC/IB=2A/0.2A Pb z Excellent DC current gain characteristics. Lead-free z Pc=30W.( TC=25℃) Production specification 2SD2061 ITO-220AB MAXIMUM RATING operating temperature range applies unle
5	2SD601A	GME	Silicon NPN Transistor Pb z Mini type package. Lead-free z Complementary to 2SB709A PNP Transistor. z Low collector to emitter saturation voltage VCE(sat). z High forward current transfer ratio hFE. 2SD601A APPLICATIONS z General purpose amplifier applications. SO
6	2SD2908	GME	Transistor with superior performance. RX2C ATS302R is the first receiver controller worldwide with internal and selectable DC-DC converter and shift-speed module. The TX2C ATS302T/RX2C ATS302R are with more functions and excellent quality, its stability and aff
7	2SD965A	GME	Transistor  Collector current up to 5A  Collector-Emitter voltage up to 30V Pb Lead-free 2SD965A APPLICATIONS  Audio amplifier  Flash unit of camera  Switching circuit SOT-89 ORDERING INFORMATION Type No. Marking 2SD965A D965A Package Code SOT-89
8	2SD1815	GME	NPN Epitaxial Planar Silicon Transistors  Adoption of FBET,MBIT processes. Pb  Large current capacity and wide ASO. Lead-free  Low collector-to-emitter saturation voltage.  Excllent linearity of hFE.  High fT.  Fast switching time. 2SD1815 APPLICATIONS  Relay drivers,high-sp
9	2SD1802	GME	NPN Epitaxial Planar Silicon Transistors  Adoption of FBET,MBIT processes. Pb  Large current capacity and wide ASO. Lead-free  Low collector-to-emitter saturation voltage.  Fast switching speed.  Small and slim package making it easy to Make 2SB1802-used sets smaller. APPLICATIO
10	2SD965	GME	Transistor z Collector current up to 5A z Collector-Emitter voltage up to 20V Pb Lead-free 2SD965 APPLICATIONS z Audio amplifier z Flash unit of camera z Switching circuit SOT-89 ORDERING INFORMATION Type No. Marking 2SD965 D965 Package Code SOT-89 M
11	2SD999	GME	NPN Silicon Transistor z Low Collector Saturation Voltage: VCE(sat)<0.4V( IC=1.0A,IB =100mA) z Excellent DC Current Gain Linearity: hFE=140Typ.( VCE=1.0V, IC=1.0A) z Complements to PNP type 2SB798 Pb Lead-free Production specification 2SD999 SOT-89 ORDERING INFORMATION
12	2SD2150	GME	Low Frequency Transistor z Low VCE(sat) :VCE(sat) =0.2V(Typ.) (IC/IB=2A/0.1A). z Excellent current gain characteristics. z Complements the 2SB1424. Pb Lead-free 2SD2150 Structure Epitaxial planar type NPN silicon transistor. ORDERING INFORMATION Type No. Marking 2SD21
13	2SD2413	GME	Silicon NPN triple diffusion planer type Transistor  High collector to base voltage VCBO.  High collector to emitter voltage VCEO.  Large collector power dissipation PC. Pb Lead-free  Low collector to emitter saturation voltage VCE(sat). Production specification 2SD2413 ORDERING INFORMATION
14	2SD602A	GME	Silicon NPN Transistor z Complementary to 2SB710A PNP Transistor z Low collector to emitter saturation voltage VCE(sat) Pb Lead-free Production specification 2SD602A APPLICATIONS z General purpose amplifier applications SOT-23 ORDERING INFORMATION Type No. Marking
15	2SD1757	GME	Silicon Epitaxial Planar Transistor  Low VCE(sat).(Typ.8mV at IC/IB=10/1mA).  Optimal for muting.  Power dissipation.PD=200mW. Pb Lead-free Production specification 2SD1757 APPLICATIONS  Audio frequency general. ORDERING INFORMATION Type No. Marking 2SD1757 AAQ/AAR/AAS SOT
16	2SD1758	GME	Medium Power Transistor  Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A)  Complements the 2SB1182. APPLICATIONS  Epitaxial planar type.  NPN silicon transistor. Pb Lead-free Production specification 2SD1758 TO-252 MAXIMUM RATING operating temperature range applies
17	2SD2118	GME	Low Power Transistor  Low VCE(sat) VCE(sat)=0.25V(Typ). (IC/IB-4A/0.1A) Pb Lead-free  Excellent DC current gain characteristics.  Complements the 2SB1412. Production specification 2SD2118 TO-252 MAXIMUM RATING operating temperature range applies unless otherwis
18	2SD2137A	GME	Power Transistors  High Forward Current Transfer Ratio hFE Which Has Satisfactory Linearity. Pb Lead-free  Low Collector-emitter Saturation Voltage VCE(sat).  Allowing Supply With The Radial Taping. APPLICATIONS  For Power Amplification.  Complementary to
19	2SD2098	GME	Transistor Pb z Low VCE(sat). Lead-free z Excellent DC current gain characteristics. z Complements the 2SB1386 Production specification 2SD2098 ORDERING INFORMATION Type No. Marking 2SD2098 AHQ/AHR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃
20	2SD1119	GME	Silicon NPN Transistor z Low collector-emitter saturation voltage VCE(sat). z Satisfactory operation performances at high efficiency with the low-voltage power supply. Pb Lead-free Production specification 2SD1119 ORDERING INFORMATION Type No. Marking 2SD1119 TQ/TR