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2SD1005 |
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| Part Number | 2SD1005 |
| Manufacturer | GME |
| Description | NPN SILICON EPITAXIAL TRANSISTOR FEATURES High Collector to Base Voltage. Excellent DC Current Gain Linearity. Complements to PNP type 2SB804. Pb Lead-free Production specification 2SD1005 O... |
| Features |
High Collector to Base Voltage. Excellent DC Current Gain Linearity. Complements to PNP type 2SB804. Pb Lead-free Production specification 2SD1005 ORDERING INFORMATION Type No. Marking 2SD1005 BW/BV/BU SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature 100 80 5 1 500 150 -55 to +150 V V V A mW ℃ ℃ E056 Rev.A www.gmesemi.com 1 Produ... |
| Document |
 2SD1005 Data Sheet
PDF 185.48KB |
| Distributor | Stock | Price | Buy |
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