2SD1913 |
Part Number | 2SD1913 |
Manufacturer | GME |
Description | Power Transistor(60V,3A ) FEATURES z Wide ASO (Adoption of MBIT process). z Low saturation voltage. z High reliability. z High breakdown voltage. z Micaless package facilitating mounting Pb Lead-fre... |
Features |
z Wide ASO (Adoption of MBIT process). z Low saturation voltage. z High reliability. z High breakdown voltage. z Micaless package facilitating mounting
Pb
Lead-free
Production specification
2SD1913
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
60 V
VCEO VEBO IC PC Tj,Tstg
Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction and Storage Temperature
60 V 6V 3A 2W -55 to +150 ℃
X097 Rev.A
www.gmicroelec.com 1
Production specification
Power Tr... |
Document |
2SD1913 Data Sheet
PDF 194.03KB |
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