2SD1758 GME Medium Power Transistor Datasheet, en stock, prix

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2SD1758

GME
2SD1758
2SD1758 2SD1758
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Part Number 2SD1758
Manufacturer GME
Description Medium Power Transistor FEATURES  Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A)  Complements the 2SB1182. APPLICATIONS  Epitaxial planar type.  NPN silicon transistor. Pb Lead-free Producti...
Features
 Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A)
 Complements the 2SB1182. APPLICATIONS
 Epitaxial planar type.
 NPN silicon transistor. Pb Lead-free Production specification 2SD1758 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5V IC Collector Current(DC) 2A ICP Collector Current(Pulse) 2.5 A IB Base Current 1A PC Collector Power Dissipation 2W Tj ,Tstg Junction and Storage temperature range -55 to +...

Document Datasheet 2SD1758 Data Sheet
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