2SD1758 |
Part Number | 2SD1758 |
Manufacturer | GME |
Description | Medium Power Transistor FEATURES Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) Complements the 2SB1182. APPLICATIONS Epitaxial planar type. NPN silicon transistor. Pb Lead-free Producti... |
Features |
Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) Complements the 2SB1182. APPLICATIONS Epitaxial planar type. NPN silicon transistor. Pb Lead-free Production specification 2SD1758 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5V IC Collector Current(DC) 2A ICP Collector Current(Pulse) 2.5 A IB Base Current 1A PC Collector Power Dissipation 2W Tj ,Tstg Junction and Storage temperature range -55 to +... |
Document |
2SD1758 Data Sheet
PDF 238.09KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | 2SD1750 |
Panasonic Semiconductor |
Silicon NPN triple diffusion planar type Transistor | |
2 | 2SD1750A |
Panasonic Semiconductor |
Silicon NPN triple diffusion planar type Transistor | |
3 | 2SD1751 |
Panasonic Semiconductor |
Silicon NPN triple diffusion planar type Transistor | |
4 | 2SD1752 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type Transistor | |
5 | 2SD1752A |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type Transistor |