GME 2SC fiche technique

No.	Partie #	Fabricant	Description
1	2SC1623	GME	Silicon Transistor  High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA).  High Voltage:VCEO=50V.  MSL 1. APPLICATIONS Pb Lead-free  NPN Silicon Epitaxial Planar Transistor.  Audio frequency general purpose amplifier. ORDERING INFORMATION Type No. Marking 2
2	2SC2073	GME	NPN Triple Didduesd Planar Silicon Transistor z High Breakdown Voltage(VCBO≥900V). z Fast Switching Speed. z Wide ASO. Pb Lead-free TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 900 V VCEO
3	2SC3357	GME	NPN Silicon Transistor Pb z Low Noise and High Gain Lead-free NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, z Large PT in Small Package PT : 2 W with 16 cm2*0.7 mm Ceramic Substrate. APPLICA
4	2SC945	GME	Silicon Epitaxial Planar Transistor z High voltage and high current. z Excellent hFE linearity. z Low noise. Pb Lead-free 2SC945 APPLICATIONS z Audio frequency amplifier. ORDERING INFORMATION Type No. Marking 2SC945 CR SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless
5	2SC3650	GME	General-Purpose Amplifier Pb  High DC current gain. Lead-free  Low collector-to-emitter saturation voltage.  Large current capacity.  Very small size making it easy to provide high- Density,small-sized hybrid IC′s. APPLICATIONS LFamplifiers,various drivers,muting
6	2SC3303	GME	Silicon NPN Transistor  Low collector saturation voltage: VCE(sat)=0.4V(max)(IC=3A).  High speed switching time:tstg=1us(typ). Pb Lead-free APPLICATIONS  High Current Switching Applications.  DC-DC Converter Applications. Production specification 2SC3303 TO-251 TO
7	2SC4672	GME	Low Frequency Transistor  Low saturation voltage:VCE(sat)=0.1V at IC/IB=1A/50mA.  Excellent DC current gain characteristics.  Complements the 2SA1797.  MSL 3 APPLICATIONS  Power amplifier application. Pb Lead-free ORDERING INFORMATION Type No. Marking 2SC4672 DKP/
8	2SC3125	GME	Silicon Epitaxial Planar Transistor  Good Linearity of fT. Pb Lead-free Production specification 2SC3125 ORDERING INFORMATION Type No. Marking 2SC3125 HH SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-B
9	2SC1654	GME	Silicon Epitaxial Planar Transistor  High DC current gain:hFE=130(Typ) (VCE=3V,IC=15mA).  High voltage. Pb Lead-free 2SC1654 APPLICATIONS  Audio frequency general purpose amplifier applications. ORDERING INFORMATION Type No. Marking 2SC1654 N5/N6/N7 SOT-23 Package Code SOT-
10	2SC2412	GME	Silicon Epitaxial Planar Transistor  Low Cob.Cob=2.0pF  Complementary to 2SA1037 Pb Lead-free Production specification 2SC2412 APPLICATIONS  NPN Silicon Epitaxial Planar Transistor ORDERING INFORMATION Type No. Marking 2SC2412 BQ/BR/BS SOT-23 Package Code SOT-23 MAXIMUM RA
11	2SC2712	GME	Silicon NPN Transistor  Low noise：NF=1dB (Typ.),10 dB(Max)  Complementary to 2SA1162 Pb Lead-free  High voltage and high current  Excellent hFE linearity 2SC2712 APPLICATIONS  Audio frequency general purpose amplifier applications SOT-23 ORDERING INFORMATION T
12	2SC3052	GME	Silicon Epitaxial Planar Transistor  Low collector to emitter saturation voltage.  Excellent linearity of DC forward current gain.  Super mini package for easy mounting. Pb Lead-free 2SC3052 APPLICATIONS  For hybrid IC,small type machine low frequency voltage amplify application
13	2SC2873	GME	Silicon NPN Transistor z Small flat package. z Low saturation voltage VCE(sat)=-0.5V z High speed switching time z Complementary to 2SA1213 Pb Lead-free Production specification 2SC2873 APPLICATIONS z Power amplifier z Power Switching ORDERING INFORMATION Type No. Ma
14	2SC4115	GME	NPN Epitaxial Planar Silicon Transistor  Low VCE(sat). Pb Lead-free VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)  Excellent current gain characteristics.  Complements to 2SA1585. Production specification 2SC4115 ORDERING INFORMATION Type No. Marking 2SC4115 4115G/4115R/4115S S
15	2SC3149	GME	NPN Transistor  High breakdown voltage(VCBO≥900V).  Fast switching speed. Pb  Wide ASO. Lead-free 2SC3149 PPLICATIONS  800V/1.5A Switching Regulator Applications. TO-251 MAXIMUM RATING operating temperature range applies unless otherwise specified Symb
16	2SC4102	GME	Silicon Transistor  Excellent hFE linearity.  Power dissipation:PCM=200mW Pb Lead-free Production specification 2SC4102 APPLICATIONS  NPN Silicon Epitaxial Planar Transistor. ORDERING INFORMATION Type No. Marking 2SC4102 TP/TR/TS SOT-323 Package Code SOT-32
17	2SC4116	GME	Transistor  Excellent hFE linearity.  High voltage and current.  Complementary to 2SA1586.  Small package. Pb Lead-free 2SC4116 APPLICATIONS  NPN Silicon Epitaxial Planar Transistor.  Switching and amplification. ORDERING INFORMATION Type No. Markin
18	2SC4003	GME	NPN Epitaxial Planar Silicon Transistor  High hFE hFE=60 to 200.  Low VCE(sat)=0.6V. Pb Lead-free Production specification 2SC4003 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO Collector-Base
19	2SC1766	GME	NPN Transistor  Small flat package.  Low saturation voltage VCE(sat)=-0.5V  High speed switching time  PC=1.0 to 2.0W  High saturation current capability Pb Lead-free 2SC1766 APPLICATIONS  Power amplifier ORDERING INFORMATION Type No. Marking 2SC1766
20	2SC5554	GME	Silicon Epitaxial Planar Transistor z Capable low voltage operation APPLICATIONS Pb Lead-free z Designed for low noise amplifier at VHF UHF and CATV band Production specification 2SC5554 ORDERING INFORMATION Type No. Marking 2SC5554 YH SOT-23 Package Code SOT-23 MAXIMUM RAT