2SC2073 |
Part Number | 2SC2073 |
Manufacturer | GME |
Description | Production specification NPN Triple Didduesd Planar Silicon Transistor 2SC2073 FEATURES z High Breakdown Voltage(VCBO≥900V). z Fast Switching Speed. z Wide ASO. Pb Lead-free TO-220AB MAXIMUM RAT... |
Features |
z High Breakdown Voltage(VCBO≥900V). z Fast Switching Speed. z Wide ASO.
Pb
Lead-free
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
900 V
VCEO VEBO IC IB PC Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Continuous Pulse
Base Crrent
Collector Dissipation Junction and Storage Temperature
Ta=25℃ Tc=25℃
800 V
7V 1.5
A 5 0.8 A 2
W 40 -55 to +150 ℃
X033 Rev.A
www.gmicroelec.com 1
Production specification
NPN Triple Didduesd Planar Silicon Transistor
2SC20... |
Document |
2SC2073 Data Sheet
PDF 221.14KB |
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