2SC3357 GME NPN Silicon Transistor Datasheet, en stock, prix

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2SC3357

GME
2SC3357
2SC3357 2SC3357
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Part Number 2SC3357
Manufacturer GME
Description Production specification NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD 2SC3357 FEATURES Pb z Low Noise and High Gain Lead-free NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f =...
Features Pb z Low Noise and High Gain Lead-free NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, z Large PT in Small Package PT : 2 W with 16 cm2*0.7 mm Ceramic Substrate. APPLICATIONS z The 2SC3357 is an NPN silicon epitaxial transistor designed For low noise amplifier at VHF, UHF and CATV band. z It has large dynamic range and good current characteristic. ORDERING INFORMATION Type No. Marking 2SC3357 RH/RF/RE Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO Collector-...

Document Datasheet 2SC3357 Data Sheet
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