2SC4003 |
Part Number | 2SC4003 |
Manufacturer | GME |
Description | NPN Epitaxial Planar Silicon Transistor FEATURES High hFE hFE=60 to 200. Low VCE(sat)=0.6V. Pb Lead-free Production specification 2SC4003 TO-251 TO-252 MAXIMUM RATING operating temperature r... |
Features |
High hFE hFE=60 to 200. Low VCE(sat)=0.6V. Pb Lead-free Production specification 2SC4003 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO Collector-Base Volage Collector-Emitter Voltage 400 V 400 V VEBO Emitter-Base Voltage 5V IC Collector Current(DC) 0.2 A PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)014 Rev.A www.gmesemi.com 1 Production specification NPN Epitaxial Planar Silicon Transistor 2SC4003 ELECTRICAL CHARACTERISTIC... |
Document |
2SC4003 Data Sheet
PDF 187.32KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC400 |
Toshiba |
SILICON PNP TRANSISTOR | |
2 | 2SC4001 |
NEC |
Silicon NPN Transistor | |
3 | 2SC4001 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
4 | 2SC4002 |
Sanyo Semicon Device |
Silicon NPN Transistor | |
5 | 2SC4002 |
ON Semiconductor |
NPN Triple Diffused Planar Silicon Transistor |