No. | Partie # | Fabricant | Description | Fiche Technique |
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GME |
Silicon Transistor High DC current gain.hFE: 200TYP (VCE=-1.0V,IC=-100mA) Complimentary to the 2SD596. Pb Lead-free 2SB624 APPLICATIONS Audio frequency amplifier. Switching appilication. ORDERING INFORMATION Type No. Marking 2SB624 BV1/BV2/BV3/BV4/BV5 |
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GME |
Power Transistor Low VCE(sat). VCE(sat)=-0.5V(TYP.) (IC/IB=-2A/-0.2A) Complements the 2SD1762. Pb Lead-free Production specification 2SB1185 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit |
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GME |
Silicon PNP Transistor Large collector power dissipation PC. Mini Power type package,allowing Pb Lead-free downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Production specification 2SB766 ORDERING INFORMATION |
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GME |
PNP Epitaxial Planar Silicon Transistors Very small size making it easy to provide High-density,small-size hybrid IC’s. Pb Lead-free Production specification 2SB1119 ORDERING INFORMATION Type No. Marking 2SB1119 BB SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwi |
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GME |
PNP Epitaxial Planar Silicon Transistors z Adoption of FBET,MBIT processes. Pb z Large current capacity and wide ASO. Lead-free z Low collector-to-emitter saturation voltage. z Fast switching speed. z Small and slim package making it easy to Make 2SB1202-used sets smaller. APPLICATIO |
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GME |
PNP Epitaxial Planar Silicon Transistors Good Linearity of hfe. Complementary to KTD2060 Pb Lead-free Production specification 2SB1274 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage |
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GME |
Power Transistor z High breakdown voltage and high current. BVCEO=-80V,IC=-1A z Good hFEVLinearity. z Low VCE(sat). z Complements the 2SD1898. Pb Lead-free APPLICATIONS z Epitaxial planar type PNP silicon transistor Production specification 2SB1260 SOT-89 ORDERIN |
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GME |
PNP Silicon Transistor High forward current transfer ratio hFE Excellent HFE Linearity. Complements the 2SD1819A. Pb Lead-free APPLICATIONS For general purpose amplification. Production specification 2SB1218A ORDERING INFORMATION Type No. Marking 2SB1218A B |
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GME |
Power Transistor Low saturation voltage,typically VCE(sat)=-0.45(Max) at IC/IB=-1.5A/-0.15A Pb Lead-free Excellent DC current gain characterisitics. Complementary the 2SD1963. Production specification 2SB1308 ORDERING INFORMATION Type No. Marking 2SB130 |
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GME |
PNP Epitaxial Planar Silicon Transistors z Low collector-emitter saturation Pb Lead-free voltage VCE(sat).<-0.4V(IC=-0.1A,IB=-100mA) z Excellent DC Current Gain Linearity: HFE=100 TYP.(VCE=-1.0V IC=-0.1 Production specification 2SB798 ORDERING INFORMATION Type No. Marking 2SB798 |
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GME |
Power Transistor z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) z Complements the 2SD1760. 2SB1184 Pb Lead-free APPLICATIONS z z Epitaxial planar type. PNP silicon transistor. TO-252 MAXIMUM RATING operating temperature range applies unless otherwise speci |
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GME |
Power Transistor z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) z Complements the 2SD1864. APPLICATIONS z Epitaxial planar type. z PNP silicon transistor. Pb Lead-free Production specification 2SB1243 TO-251 MAXIMUM RATING operating temperature range applie |
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GME |
PNP Epitaxial Planar Silicon Transistors z High hFE hFE=100 to 400. z Low VCE(sat0 VCE(sat)≤0.3V. Pb Lead-free Production specification 2SB1261 ORDERING INFORMATION Type No. Marking 2SB1261 1261 SOT-89 Package Code SOT-89 MAXIMUM RATING operating temperature range applies unless ot |
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GME |
Silicon PNP Transistor Large collector power dissipation PC. Complementary to 2SD874A. Pb Lead-free Mini Power type package,allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Production specification |
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GME |
Silicon Epitaxial Planar Transistor High forward current transfer ratio hFE. Mini type package, allowing downsizing Pb Lead-free of the equipment and automatic insertion through the tape packing and the magazine packing. 2SB709A APPLICATIONS For general amplification comple |
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GME |
Silicon PNP epitaxial planer type Transistor Low collector-emitter saturation voltage VCE(sat). Pb Lead-free Mini Power type package,allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Complementary the 2SD2185. Production |
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GME |
Transistor Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). Pb Lead-free Excellent DC current gain characterisitics. Complementary the 2SD2150. 2SB1424 APPLICATIONS This device is designed as a general purpose amplifier and switching. ORDERING INFORMA |
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GME |
PNP Epitaxial Silicon Transistor Low Frequency Power Amplifer Coloe TV Vertical Deflection Output Complementary Pb Pair With 2SD1138. Lead-free Production specification 2SB861 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Par |
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GME |
Medium power transistor z Low VCE(SAT)=-0.5V(Typ.) (IC/IB=-1.5A/-0.15A). z Complementary the 2SD1766. Pb Lead-free 2SB1188 APPLICATIONS z Epitaxial planar type. z PNP silicon transistor. ORDERING INFORMATION Type No. Marking 2SB1188 BCP/BCQ/BCR SOT-23 Package Code |
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GME |
PNP General Purpose Amplifier z Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-500mA/-50mA). z Complementary NPN type available 2SD1664. Pb Lead-free 2SB1132 APPLICATIONS z This device is designed as a general purpose amplifier and switching. ORDERING INFORMATION Type No. Marking 2SB113 |
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