2SB1185 |
Part Number | 2SB1185 |
Manufacturer | GME |
Description | Power Transistor FEATURES Low VCE(sat). VCE(sat)=-0.5V(TYP.) (IC/IB=-2A/-0.2A) Complements the 2SD1762. Pb Lead-free Production specification 2SB1185 TO-220AB MAXIMUM RATING operating temperat... |
Features |
Low VCE(sat). VCE(sat)=-0.5V(TYP.) (IC/IB=-2A/-0.2A) Complements the 2SD1762. Pb Lead-free Production specification 2SB1185 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation DC Pulse Junction and Storage Temperature -50 V -5 V -3 A -4.5 2W -55 to +150 ℃ X016 Rev.A www.gmesemi.com 1 Production specification Power Transistor 2SB1185 ELECTRICAL CHARACTERISTICS Rati... |
Document |
2SB1185 Data Sheet
PDF 187.43KB |
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