2SB1308 GME Power Transistor Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

2SB1308

GME
2SB1308
2SB1308 2SB1308
zoom Click to view a larger image
Part Number 2SB1308
Manufacturer GME
Description Power Transistor(-50V,-3A) FEATURES  Low saturation voltage,typically VCE(sat)=-0.45(Max) at IC/IB=-1.5A/-0.15A Pb Lead-free  Excellent DC current gain characterisitics.  Complementary the 2SD1...
Features
 Low saturation voltage,typically VCE(sat)=-0.45(Max) at IC/IB=-1.5A/-0.15A Pb Lead-free
 Excellent DC current gain characterisitics.
 Complementary the 2SD1963. Production specification 2SB1308 ORDERING INFORMATION Type No. Marking 2SB1308 BFP/BFQ/BFR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO IC PC Emitter-Base Voltage Collector Current
  –DC -Pulse Collector power Dissipation -6 V -3 A -5 0.5 W Tj,Tstg Junction and Storage Temp...

Document Datasheet 2SB1308 Data Sheet
PDF 191.68KB
Distributor Stock Price Buy

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SB1300
NEC
PNP SILICON TRANSISTOR Datasheet
2 2SB1301
Renesas
PNP SIlicon Transistor Datasheet
3 2SB1302
Sanyo Semicon Device
PNP Transistor Datasheet
4 2SB1302
Kexin
PNP Epitaxial Planar Silicon Transistors Datasheet
5 2SB1302
ON Semiconductor
Bipolar Transistor Datasheet
More datasheet from GME



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact