2SB861 GME PNP Epitaxial Silicon Transistor Datasheet, en stock, prix

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2SB861

GME
2SB861
2SB861 2SB861
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Part Number 2SB861
Manufacturer GME
Description PNP Epitaxial Silicon Transistor FEATURES  Low Frequency Power Amplifer Coloe TV Vertical Deflection Output Complementary Pb Pair With 2SD1138. Lead-free Production specification 2SB861 TO-220...
Features
 Low Frequency Power Amplifer Coloe TV Vertical Deflection Output Complementary Pb Pair With 2SD1138. Lead-free Production specification 2SB861 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -200 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Peak Collector Dissipation Ta=25℃ Tc=25℃ Junction and Storage Temperature -150 V -6 V -2 A -5 1.8 W 30 -45 to +150 ℃ X032 Rev.A www.gmesemi.com 1 Production specification PNP E...

Document Datasheet 2SB861 Data Sheet
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