| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
250V Channel MOSFET ./++95 : )*+ &' )& /4 4 ±&+ , ( ( ( , = ( = ,$ ? ?$9 9 9 ; , : (! < (! -!(! < |
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Fairchild Semiconductor |
N-Channel MOSFET • 3.8 A, 200 V, RDS(on) = 1.35 Ω (Max.) @ VGS = 10 V, ID = 1.9 A • Low Gate Charge (Typ. 4.0 nC) • Low Crss (Typ. 6.0 pF) • 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS |
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Fairchild Semiconductor |
800V N-Channel MOSFET • • • • • • 3.9A, 800V, RDS(on) = 3.6Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 8.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS 3 5 " " TO-220 FQP Series ! S Absolute Maximum Ratings S |
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Fairchild Semiconductor |
900V N-Channel MOSFET • 4.0 A, 900 V, RDS(on) = 4.2 Ω (Max.) @ VGS = 10 V, ID = 2.0 A • Low Gate Charge (Typ. 17 nC) • Low Crss (Typ. 5.6 pF) • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDS |
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Fairchild Semiconductor |
200V N-Channel MOSFET + 2-)374 2-.**74 8 )** '( )' ./ / ±'* + % % % + ; % ; +$ = =$7 7 7 9 + 8 |
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Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET + 2-)374 2-.**74 8 )** '( )' ./ / ±'* + % % % + ; % ; +$ = =$7 7 7 9 + 8 |
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Fairchild Semiconductor |
500V N-Channel MOSFET 2,-(83 2,0))83 9 ()) %& - 0( 0% 4 ±%) * ' ' ' * < ' < *7 > >78 8 8 : * 9 '! ; |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 4.4A, 600V, RDS(on) = 2.2Ω @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 8.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings |
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Fairchild Semiconductor |
900V N-Channel MOSFET • • • • • • 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V Low gate charge ( typically 24 nC) Low Crss ( typically 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS ! " " " TO-220 IRF Series ! S Absolute Maximum Ra |
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Fairchild Semiconductor |
N-Channel MOSFET • 650V @TJ = 150°C • Typ. RDS(on) = 1.0Ω • Ultra low gate charge (typ. Qg = 12.8nC) • Low effective output capacitance (typ. Coss.eff = 32pF) • 100% avalanche tested SuperFET Description SuperFETTM is, Farichild’s proprietary, new generation of high |
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Fairchild Semiconductor |
SSP4N60 Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BVDSS = 600 V RDS(on) = 2. |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • • 4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability TO-220F package isolation = 4.0kV (Note 6) D G G DS TO-220 SSP Series G |
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Fairchild Semiconductor |
Advanced Power MOFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BVDSS = 600 V RDS(on) = 2. |
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Fairchild Semiconductor |
(MTP4N45 / MTP4N45) N-Channel Power MOSFETs |
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Fairchild Semiconductor |
(MTP4N45 / MTP4N45) N-Channel Power MOSFETs |
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Fairchild Semiconductor |
(MTP4N08 / MTP4N10) N-Channel Power MOSFETs |
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Fairchild Semiconductor |
N-Channel Power MOSFET |
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Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 3.400 Ω (Typ.) 1 2 3 SSP4N80A BVDSS = 800 V RDS(on) = |
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Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 2.450 Ω (Typ.) SSP4N80AS BVDSS = 800 V RDS(on) = 3.0 Ω |
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