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SSP4N60B |
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| Part Number | SSP4N60B |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o... |
| Features |
• • • • • • • 4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability TO-220F package isolation = 4.0kV (Note 6) D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) SSP4N60B 600 4.0 2.5 16 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) SSS4N60B 4... |
| Document |
 SSP4N60B Data Sheet
PDF 890.06KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSP4N60 |
Samsung Electronics |
(SSP4N55 / SSP4N60) N-Channel Power MOSFET |
|
| 2 | SSP4N60AS |
Fairchild Semiconductor |
Advanced Power MOFET |
|
| 3 | SSP4N60AS |
Samsung Electronics |
Advanced Power MOFET |
|
| 4 | SSP4N55 |
Samsung Electronics |
(SSP4N55 / SSP4N60) N-Channel Power MOSFET |
|
| 5 | SSP4N70 |
Samsung Electronics |
(SSP4N70 / SSP4N80) N-Channel Power MOSFETs |
|