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SSP4N80A |
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| Part Number | SSP4N80A |
| Manufacturer | Fairchild Semiconductor |
| Description | www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Cur... |
| Features |
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 3.400 Ω (Typ.)
1 2 3
SSP4N80A
BVDSS = 800 V RDS(on) = 4.0 Ω ID = 4 A
TO-220
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy ... |
| Document |
 SSP4N80A Data Sheet
PDF 282.71KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSP4N80 |
Samsung Electronics |
(SSP4N70 / SSP4N80) N-Channel Power MOSFETs |
|
| 2 | SSP4N80AS |
Fairchild Semiconductor |
Advanced Power MOSFET |
|
| 3 | SSP4N55 |
Samsung Electronics |
(SSP4N55 / SSP4N60) N-Channel Power MOSFET |
|
| 4 | SSP4N60 |
Samsung Electronics |
(SSP4N55 / SSP4N60) N-Channel Power MOSFET |
|
| 5 | SSP4N60AS |
Fairchild Semiconductor |
Advanced Power MOFET |
|