| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
KSD2058 30V, IC = 2A IB1 = - IB2 = 0.2A RL = 15Ω hFE Classification Classification hFE O 60 ~ 120 Y 100 ~ 200 Value 60 60 7 3 0.5 1.5 25 150 - 55 ~ 150 Units V V V A A W W °C °C Min. 60 8 Typ. 3 35 0.65 1.3 0.65 Max. 10 1 Units µA mA V 1.5 V V |
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Fairchild Semiconductor |
Low Frequency Power Amplifier , IC = 0.5A VCE = 5V, IC = 0.5A VCB = 10V, f = 1MHz VCC = 30V, IC = 2A IB1 = - IB2 = 0.2A RL = 15Ω 35 0.65 1.3 0.65 3 0.4 60 8 1.5 V V MHz pF µs µs µs Min. Typ. Max. 10 1 Units µA mA V hFE Classification Classification hFE O 60 ~ 120 Y 100 ~ 200 G 1 |
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Fairchild Semiconductor |
Audio Frequency Power Amplifier @ TC = 125°C VEB = 5V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A IC = 1A, IB = 1mA IC = 1A, IB = 1mA VCC = 50V, IC = 1A IB1 = - IB2 = 1mA RL = 50Ω 0.5 1.0 1.0 1000 2000 Min. Typ. Max. 10 1.0 10 1.0 1.0 30000 1.5 2.0 V V µs µs µs Units µA mA µA mA |
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Fairchild Semiconductor |
NPN Transistor IC = 2A, IB = 5mA Min. 275 600 1 1 1.5 1.5 2 Max. Units V V mA mA V V V ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD5018 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10000 100 VCE = 5V IC = 400 I |
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Fairchild Semiconductor |
Audio Frequency Power Amplifier @ TC = 125°C VEB = 5V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A IC = 1A, IB = 1mA IC = 1A, IB = 1mA VCC = 50V, IC = 1A IB1 = - IB2 = 1mA RL = 50Ω 0.5 1.0 1.0 1000 2000 Min. Typ. Max. 10 1.0 10 1.0 1.0 30000 1.5 2.0 V V µs µs µs Units µA mA µA mA |
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Fairchild Semiconductor |
Audio Power Amplifier DC to DC Converter idth Product Output Capacitance Turn ON Time Fall Time Storage Time Test Condition IC = 5mA, IE = 0 IC = 10mA, RBE =∞ IE = 5mA, IC = 0 VCB = 80V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 6A IC = 5A, IB = 0.5A VCE = 5V, IC = 1A VCE = |
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Fairchild Semiconductor |
NPN Transistor f = 1MHz 40 15 50 0.45 1 8 90 1.5 1.5 V V MHz pF Min. 80 Typ. Max. 30 100 240 Units V µA µA hFE1 Classification Classification hFE1 R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD1408 Typic |
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Fairchild Semiconductor |
Audio Frequency Power Amplifier & Medium Speed Switching |
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Fairchild Semiconductor |
NPN Transistor • Low Collector-Emtter Saturation Voltage & Large Collector Current • High Power Dissipation: PC = 1.3W (Ta=25°C) • Complementary to KSB1151 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C |
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Fairchild Semiconductor |
High Gain Power Transistor ics 2.0 1.8 10000 VCE = 4V IB = 1.2mA IB = 1mA IB = 0.8mA IB = 0.6mA IB = 0.4mA Ic[A], COLLECTOR CURRENT 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 hFE, DC CURRENT GAIN 1000 100 IB = 0.2mA 0 1 2 3 4 5 6 7 8 9 10 10 0.01 0.1 1 10 VCE[V], |
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Fairchild Semiconductor |
Low Frequency Power Amplifier IC=0.5A, IB=50mA 40 0.18 Min. 40 20 5 0.1 0.1 400 0.4 V Typ. Max. Units V V V µA µA hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KSD261 Typic |
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Fairchild Semiconductor |
Low Frequency Power Amplifier = 5V, IC = 0.5A VCE = 5V, IC = 0.5A VCB = 10V, IE = 0, f = 1MHz VCC = 30V, IC = 1A IB1 = - IB2 = 0.2A RL = 30Ω 60 60 20 0.4 0.7 3 70 0.8 1.5 0.8 300 1 1 V V MHz pF µs µs µs Min. Typ. Max. 100 100 Units µA µA V hFE Classification Classification hFE1 |
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Fairchild Semiconductor |
KSD5703 V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 8A IC = 8A, IB = 1.6A IC = 8A, IB = 1.6A VCC = 200V, IC = 6A IB1 = 1.2A, IB2= - 2.4A RL = 33.3Ω 0.1 15 5.3 Min. Typ. Max. 1 10 1 40 7.3 5 1.5 0.3 V V µs Units mA µA mA ©2000 Fairchild Semic |
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Fairchild Semiconductor |
Low Frequency Power Amplifier IC=0.5A, IB=50mA 40 0.18 Min. 40 20 5 0.1 0.1 400 0.4 V Typ. Max. Units V V V µA µA hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KSD261 Typic |
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Fairchild Semiconductor |
High hFE/ AF Power Amplifier , IC = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A VCE = 12V, IC = 0.2A 30 500 Min. 60 Typ. Max. 100 100 100 2500 1 V MHz Units V µA µA µA hFE Classification Classification hFE Q 500 ~ 1000 P 800 ~ 1500 O 1200 ~ 2500 ©2001 Fairchild Semiconductor Cor |
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Fairchild Semiconductor |
B/W TV Horizontal Deflection Output = 100V, IE = 0 VCE = 5V, IC = 5A IC = 5A, IB = 0.5A IC = 5A, IB = 0.5A VCE = 5V, IC = 0.5A 10 20 Min. 150 70 8 20 140 1 1.5 V V MHz Typ. Max. Units V V V µA hFE Classification Classification hFE N 20 ~ 50 R 40 ~ 80 O 70 ~ 140 ©2000 Fairchild Semic |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor • Audio Frequency Power Amplifier and Medium Speed Switching • Complement to KSB1116 / KSB1116A Ordering Information Part Number KSD1616AYTA KSD1616AGBU KSD1616AGTA KSD1616ALTA Top Mark D1616A D1616A D1616A D1616A 1 TO-92 1. Emitter 2. Collector 3 |
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Fairchild Semiconductor |
Low Frequency Power Amplifier Typ. Max. 100 10 320 1 1 V V MHz Units V µA µA hFE Classification Classification hFE1 Y 100 ~ 200 G 150 ~ 320 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD2012 Typical Characteristics 4 Ic[A], COLLECTOR CURRENT 3 hFE |
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Fairchild Semiconductor |
Low Frequency Power Amplifier s V V V µA µA hFE Classification Classification hFE O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSD227 Typical Characteristics 50 45 IB = 450µA IB = 400µA 1000 VCE = 1V IC[mA], COLLEC |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor • Audio Frequency Power Amplifier • Complement to KSB564A • Collector Current: IC = 1 A • Collector Power Dissipation: PC = 800 mW • Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1. Emitter 2. Base 3. Collector Absolu |
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