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KSD261 |
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| Part Number | KSD261 |
| Manufacturer | Fairchild Semiconductor |
| Description | KSD261 KSD261 Low Frequency Power Amplifier • Complement to KSA643 • Collector Power Dissipation : PC=500mW • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1. Emitte... |
| Features |
IC=0.5A, IB=50mA 40 0.18 Min. 40 20 5 0.1 0.1 400 0.4 V Typ. Max. Units V V V µA µA
hFE Classification
Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
KSD261
Typical Characteristics
500 450
1000
IB = 2.0mA IB = 1.8mA
VCE = 1V
IC[mA], COLLECTOR CURRENT
400 350 300 250 200 150 100 50 0 0 1 2 3 4 5
IB = 1.4mA IB = 1.2mA IB = 1.0mA IB = 0.8mA IB = 0.6mA IB = 0.4mA IB = 0.2mA
hFE, DC CURRENT GAIN
IB = 1.6mA
100
10 6 7 8 9 10 1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
F... |
| Document |
 KSD261 Data Sheet
PDF 38.84KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KSD261 |
Samsung semiconductor |
NPN (LOW FREQUENCY POWER AMPLIFIER) |
|
| 2 | KSD261 |
Samsung semiconductor |
NPN (LOW FREQUENCY POWER AMPLIFIER) |
|
| 3 | KSD261 |
Fairchild Semiconductor |
Low Frequency Power Amplifier |
|
| 4 | KSD2012 |
Fairchild Semiconductor |
Low Frequency Power Amplifier |
|
| 5 | KSD2012 |
INCHANGE |
NPN Transistor |
|