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KSD227 |
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| Part Number | KSD227 |
| Manufacturer | Fairchild Semiconductor |
| Description | KSD227 KSD227 Low Frequency Power Amplifier • Complement to KSA642 • Collector Power Dissipation : PC=400mW 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maxim... |
| Features |
s V V V µA µA
hFE Classification
Classification hFE O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSD227
Typical Characteristics
50 45
IB = 450µA IB = 400µA
1000
VCE = 1V
IC[mA], COLLECTOR CURRENT
40 35 30 25 20 15 10 5 0 0 1 2 3 4 5
IB = 300µA IB = 250µA IB = 200µA IB = 150µA IB = 100µA IB = 50µA
6 7 8 9 10
hFE, DC CURRENT GAIN
IB = 350µA
100
10 1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAG... |
| Document |
 KSD227 Data Sheet
PDF 40.01KB |
| Distributor | Stock | Price | Buy |
|---|
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