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KSD5018 |
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| Part Number | KSD5018 |
| Manufacturer | Fairchild Semiconductor |
| Description | KSD5018 KSD5018 Built-in Resistor at B-E for Motor Drive • High Voltage Power Darlington TR 1 TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25°... |
| Features |
IC = 2A, IB = 5mA Min. 275 600 1 1 1.5 1.5 2 Max. Units V V mA mA V V V
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD5018
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10000
100
VCE = 5V
IC = 400 IB
hFE, DC CURRENT GAIN
1000
10
V BE(sat)
1
100
VCE(sat)
10 0.01
0.1
1
10
0.1 0.1
1
10
100
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
1000
10
IC[A], COLLECTOR CURRENT
Cob[pF], CAPACITANCE
100
1
10 1 10 100
0... |
| Document |
 KSD5018 Data Sheet
PDF 38.42KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KSD5010 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | KSD5011 |
Samsung semiconductor |
NPN Transistor |
|
| 3 | KSD5011 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | KSD5012 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 5 | KSD5013 |
Samsung semiconductor |
NPN Transistor |
|