| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
FJAF6810D ltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Turn On Voltage Storage Time Fall Time Test Conditions VCB=1500V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=300mA, IC=0 VCE=5V, IC=1A VCE=5V, IC=6A IC |
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Fairchild Semiconductor |
2SJ6812 ation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=8A IC=8A, IB=2A IC=8A, IB=2A VCC=200V, IC=7A, RL=30Ω IB1= 1.4A, IB2= - 2.8A 6 10 |
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Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor -Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=6A IC=6A, IB=1.5A IC=6A, IB=1.5A VCC=200V, IC=6A, RL=33Ω IB1=1.2A, IB2= - 2.4A 6 10 5 8 3 1.5 3 0. |
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Fairchild Semiconductor |
FJAF6815 BVEBO Emitter-Base Breakdown Voltage hFE1 hFE2 DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage tSTG* Storage Time tF* Fall Time * Pulse Test: PW=20µs, duty Cycle=1% Pulsed VCB=1400V, |
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Fairchild Semiconductor |
FJL6820 kdown Voltage DC Current Gain Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IC=500µA, IE=0 IC=5mA, IB=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=8.5A VCE=5V, IC=11A IC=11A, IB=2.75A IC=11A, IB=2.75A VCC=200V, IC=10A, RL=20Ω IB1=2.0A, IB |
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Fairchild Semiconductor |
FJAF6812 ation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=8A IC=8A, IB=2A IC=8A, IB=2A VCC=200V, IC=7A, RL=30Ω IB1= 1.4A, IB2= - 2.8A 6 10 |
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Fairchild Semiconductor |
FJAF6806D ollector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Turn On Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=300mA, IC=0 VCE=5V, IC=1A VCE=5V, IC=4A IC=4A, IB=1A IC=4A, IB=1A |
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Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor itter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=8A IC=8A, IB=2A IC=8A, IB=2A VCC=200V, IC=7A, RL=30Ω IB1= 1.4A, IB2= - 2.8A 6 10 5 40 8 3 1.5 3 0.2 V |
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