2SJ6812 Fairchild Semiconductor NPN Triple Diffused Planar Silicon Transistor Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

2SJ6812

Fairchild Semiconductor
2SJ6812
2SJ6812 2SJ6812
zoom Click to view a larger image
Part Number 2SJ6812
Manufacturer Fairchild Semiconductor
Description www.DataSheet4U.com FJAF6812 FJAF6812 High Voltage Color Display Horizontal Deflection Output • High Collector-Base Breakdown Voltage : BVCBO = 1500V • High Switching Speed : tF(typ.) =0.1µs • For C...
Features itter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=8A IC=8A, IB=2A IC=8A, IB=2A VCC=200V, IC=7A, RL=30Ω IB1= 1.4A, IB2= - 2.8A 6 10 5 40 8 3 1.5 3 0.2 V V µs µs Min Typ Max 1 10 1 Units mA µA mA V * Pulse Test: PW=20µs, duty Cycle=1% Pulsed Thermal Characteristics TC=25°C unless otherwise noted Symbol RθjC Parameter Thermal Resistance, Junction to Case Typ 1.4 Max 2.08 Units °C/W ©2001 Fairchild Semiconductor Corporation Rev. B1, May 2001 www.DataSheet4U.com FJAF6812 Typical Characteristics...

Document Datasheet 2SJ6812 Data Sheet
PDF 113.50KB
Distributor Stock Price Buy

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SJ681
Toshiba
Silicon P-Channel MOSFET Datasheet
2 2SJ680
Toshiba
Silicon P-Channel MOSFET Datasheet
3 2SJ683
Sanyo Semicon Device
P-Channel Silicon MOSFET General-Purpose Switching Device Applications Datasheet
4 2SJ684
Sanyo Semicon Device
P-Channel Silicon MOSFET General-Purpose Switching Device Applications Datasheet
5 2SJ687
NEC
MOS FIELD EFFECT TRANSISTOR Datasheet
More datasheet from Fairchild Semiconductor



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact