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Features
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BVEBO
Emitter-Base Breakdown Voltage
hFE1 hFE2
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
tSTG*
Storage Time
tF* Fall Time
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IC=500µA, IE=0 IC=5mA, IB=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=10A IC=10A, IB=2.5A IC=10A, IB=2.5A VCC=200V, IC=8A, RL=25Ω IB1=1.6A, IB2= - 3.2A
1500 750
6 10 5
1 mA 10 µA 1 mA
V V V
8 3V 1.5 V 3 µs 0.2 µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjC Thermal Resistance, Ju...
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J6815 Data Sheet
