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Features
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ation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=8A IC=8A, IB=2A IC=8A, IB=2A VCC=200V, IC=7A, RL=30Ω IB1= 1.4A, IB2= - 2.8A 6 10 5 40 8 3 1.5 3 0.2 V V µs µs Min Typ Max 1 10 1 Units mA µA mA V
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
Thermal Characteristics TC=25°C unless otherwise noted
Symbol RθjC Parameter Thermal Resistance, Junction to Case Typ 1.4 Max 2.08 Units °C/W
©2001 Fairchild Semiconductor Corporation
Rev. B1, May 2001
www.DataSheet4U.com
FJAF6812
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J6812 Data Sheet
