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Fairchild Semiconductor |
150V N-Channel MOSFET • 4.3 A, 150 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 2.15 A • Low Gate Charge (Typ. 5.4 nC) • Low Crss (Typ. 7.5 pF) • 100% Avalanche Tested D D G S D-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted. , 6 6 , |
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Fairchild Semiconductor |
200V N-Channel MOSFET ; 5 ; !$ 9 + 1-)673 1-.**73 9 )** '( )8 .6 ) ±'* + % % % + < % < |
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Fairchild Semiconductor |
200V N-Channel MOSFET • 3.8 A, 200 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, ID = 1.9 A • Low Gate Charge (Typ. 4.8 nC) • Low Crss (Typ. 6.0 pF) • 100% Avalanche Tested • RoHS Compliant D D G S D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Sym |
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Fairchild Semiconductor |
500V N-Channel MOSFET • 4.0A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V • Low gate charge ( typical 18nC) • Low Crss ( typical 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS Compliant D D ! D-PAK G S FQD Series GDS I-PAK FQU Series Absolu |
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Fairchild Semiconductor |
N-Channel UniFET MOSFET •R DS(on) = N-Channel UniFETTM MOSFET 500 V, 4 A, 1.4 Ω Description UniFETTM MOSFET is F airchild Semiconductor ’s high volt age MOSFET family based on planar stripe and D MOS technology. This MOSFET is tailored to reduce on-st ate resistance, and t |
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Fairchild Semiconductor |
600V N-Channel MOSFET • 2.8 A, 600 V, RDS(on) = 2.5 Ω (Max) @VGS = 10 V, ID = 1.4 A • Low Gate Charge (Typ. 15 nC) • Low Crss (Typ. 6.5 pF) • 100% Avalanche Tested • RoHS compliant This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s |
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Fairchild Semiconductor |
300V N-Channel MOSFET 7483 1,/))83 : ()) && 7 92 /9 ; ±() * ' ' ' * > ' > *$ A A A$8 8 8 < * : '! = |
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Fairchild Semiconductor |
400V N-Channel MOSFET 0+6781 0+,((81 9 &(( %& 6 ,7 ,% ±%( ) ' ' ' ) = ' = )5 @ @ @58 8 8 : ) 9 |
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Fairchild Semiconductor |
500V N-Channel MOSFET ) 0+5&61 0+,((61 7 &(( %& 55 ,8 ±%( ) ' ' ' ) ; ' ; )4 > > >46 6 6 9 |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.0 A • Low Gate Charge (Typ. 10 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Imoroved Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninter |
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Fairchild Semiconductor |
600V N-Channel MOSFET • 650V @TJ = 150°C • Typ. Rds(on)=0.81Ω • Ultra low gate charge (typ. Qg=16nC) • Low effective output capacitance (typ. Coss.eff=32pF) • 100% avalanche tested TM Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOS |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 1.25Ω (Typ.) @ VGS = 10 V, ID = 1.75 A • Low Gate Charge (Typ. 11 nC) • Low Crss (Typ. 5 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 1.25Ω (Typ.) @ VGS = 10 V, ID = 1.75 A • Low Gate Charge (Typ. 11 nC) • Low Crss (Typ. 5 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 1.47 Ω (Typ.) @ VGS = 10 V, ID = 1.85 A • Low Gate Charge (Typ. 9 nC) • Low Crss (Typ. 4 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Imoroved Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninter |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant UniFETTM tm Description These N-Channel enhancement mode power |
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Fairchild Semiconductor |
N-Channel SuperFET MOSFET 600V, 4.6A, typ. Rds(on)=860mΩ@VGS=10V Ultra Low Gate Charge (Typ. Qg = 16 nC) UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive On Board Charger Automotive DC/DC Converter for HEV Description SuperFETTM is Fai |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 1.5 A • Low Gate Charge (Typ. 11 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply Description UniFETTM MOSFET is |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 1.38 Ω (Typ.) @ VGS = 10 V, ID = 2 A • Low Gate Charge (Typ. 9 nC) • Low Crss (Typ. 4 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Imoroved Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterrup |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 1.75A • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant December 2007 UniFETTM tm Description These N-Channel enhanc |
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