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FQD5N50C |
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| Part Number | FQD5N50C |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• 4.0A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V • Low gate charge ( typical 18nC) • Low Crss ( typical 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS Compliant D D ! D-PAK G S FQD Series GDS I-PAK FQU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Av... |
| Document |
 FQD5N50C Data Sheet
PDF 660.61KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQD5N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 2 | FQD5N15 |
Fairchild Semiconductor |
150V N-Channel MOSFET |
|
| 3 | FQD5N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 4 | FQD5N20L |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 5 | FQD5N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET |
|