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FDD5N53 |
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| Part Number | FDD5N53 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient s... |
| Document |
 FDD5N53 Data Sheet
PDF 282.80KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDD5N50 |
ON Semiconductor |
N-Channel MOSFET |
|
| 2 | FDD5N50 |
Fairchild Semiconductor |
N-Channel UniFET MOSFET |
|
| 3 | FDD5N50F |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | FDD5N50F |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 5 | FDD5N50FTM_WS |
Fairchild Semiconductor |
N-Channel MOSFET |
|