| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
80V N-Channel MOSFET • • • • • • • 16.5A, 80V, RDS(on) = 0.115Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 28 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " " TO-2 |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 290 mΩ (Typ.) @ VGS = 10 V, ID = 8.5 A • Low Gate Charge (Typ. 48 nC) • Low Crss (Typ. 23 pF) • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply • A |
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Fairchild Semiconductor |
400V N-Channel MOSFET • 16 A, 400 V, RDS(on) = 270 mΩ (Max) @VGS = 10 V, ID = 8.0 A • Low Gate Charge (Typ. 45 nC) • Low Crss (Typ. 30 pF) • 100% Avalanche Tested * 6 6 * |
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Fairchild Semiconductor |
N-Channel MOSFET PowerTrench® tm MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power |
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Fairchild Semiconductor |
MOSFET |
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Fairchild Semiconductor |
FQP17N40 and Benefits ▪ ±2.5 A, 35 V output rating ▪ Low rDS(on) outputs, 0.45 Ω source, 0.36 Ω sink typical ▪ Automatic current decay mode detection/selection ▪ 3.0 to 5.5 V logic supply voltage range ▪ Mixed, fast, and slow current decay modes ▪ Home output |
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Fairchild Semiconductor |
80V N-Channel MOSFET • • • • • • 12.9A, 80V, RDS(on) = 0.115Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 28 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S |
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Fairchild Semiconductor |
80V LOGIC N-Channel MOSFET • • • • • • • 12.9A, 80V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 8.8 nC) Low Crss ( typical 29 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirements allowing direct operation from logic dri |
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Fairchild Semiconductor |
80V LOGIC N-Channel MOSFET • • • • • • • • 16.5A, 80V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 8.8 nC) Low Crss ( typical 29 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Low level gate drive requireme |
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Fairchild Semiconductor |
N-Channel QFET MOSFET • 16 A, 400 V, RDS(on) = 270 mΩ (Max) @VGS = 10 V, ID = 8.0 A • Low Gate Charge (Typ. 45 nC) • Low Crss (Typ. 30 pF) • 100% Avalanche Tested * 6 6 * |
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Fairchild Semiconductor |
Single-Stage PFC Primary-Side-Regulation Offline LED Driver Cost-Effective Solution without Input Bulk Capacitor and Feedback Circuitry Power-Factor Correction (PFC) Integrated Power MOSFET Accurate Constant-Current (CC) Control Independent Online Voltage, Output Voltage, and Magnetizing Inductance Va |
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Fairchild Semiconductor |
Dual 20v N-Channel PowerTrench MOSFET • 0.7 A, 20 V. RDS(ON) = 400 mΩ @ VGS = 4.5 V RDS(ON) = 550 mΩ @ VGS = 2.5 V • ESD protection diode (note 3) • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC70-6 surface mount package A |
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Fairchild Semiconductor |
400V N-Channel MOSFET 0,%))72 8 ()) %& & -(9 9 ±3) * ' ' ' * < ' < *6 > >67 7 7 : * 8 '! ; '! |
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Fairchild Semiconductor |
80V LOGIC N-Channel MOSFET • • • • • • • • 16.5A, 80V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 8.8 nC) Low Crss ( typical 29 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Low level gate drive requireme |
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Fairchild Semiconductor |
80V N-Channel MOSFET • • • • • • • 16.5A, 80V, RDS(on) = 0.115Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 28 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-P |
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Fairchild Semiconductor |
80V LOGIC N-Channel MOSFET • • • • • • • • 16.5A, 80V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 8.8 nC) Low Crss ( typical 29 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Low level gate drive requireme |
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Fairchild Semiconductor |
80V N-Channel MOSFET • • • • • • • 11.2A, 80V, RDS(on) = 0.115Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 28 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! GD S ! " " " TO-22 |
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Fairchild Semiconductor |
80V LOGIC N-Channel MOSFET • • • • • • • • 11.2A, 80V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 8.8 nC) Low Crss ( typical 29 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Low level gate drive requireme |
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Fairchild Semiconductor |
400V N-Channel MOSFET • 9.5 A, 400 V, RDS(on) = 270 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A • Low Gate Charge (Typ. 45 nC) • Low Crss (Typ. 30 pF) • 100% Avalanche Tested D GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. * 6 6 * |
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Fairchild Semiconductor |
80V N-Channel MOSFET • • • • • • 12.9A, 80V, RDS(on) = 0.115Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 28 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S |
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