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FQPF17N08 |
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| Part Number | FQPF17N08 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • • 11.2A, 80V, RDS(on) = 0.115Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 28 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! GD S ! " " " TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQPF17N08 80 11.2 7.9 44.8 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A... |
| Document |
 FQPF17N08 Data Sheet
PDF 600.02KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQPF17N08L |
Fairchild Semiconductor |
80V LOGIC N-Channel MOSFET |
|
| 2 | FQPF17N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 3 | FQPF17P06 |
Fairchild Semiconductor |
60V P-Channel MOSFET |
|
| 4 | FQPF17P10 |
Fairchild Semiconductor |
100V P-Channel MOSFET |
|
| 5 | FQPF10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|